1.55 μm emission from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation

被引：33

作者：

Guimard, Denis

Tsukamoto, Shiro

Nishioka, Masao

Arakawa, Yasuhiko

机构：

[1] Univ Tokyo, Inst Ind Sci, Nanoelect Collaborat Res Ctr, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Lab Integrated Micro Mechatron Syst, CNRS,UMI 2820,Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2337163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a fabrication technique for redshifting the emission wavelength of InAs quantum dots (QDs) grown on GaAs substrate by metal organic chemical vapor deposition. By introducing an antimony irradiation step during the InAs QD growth, the authors have achieved ground-state emission at 1.55 mu m (and beyond) from InAs/GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). Photoluminescence intensity is strongly enhanced (x100) at RT compared to Sb-free QDs capped by a higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51 mu m. (c) 2006 American Institute of Physics.

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