InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

被引：70

作者：

Xin, YC ^{[1
]}

Vaughn, LG ^{[1
]}

Dawson, LR ^{[1
]}

Stintz, A ^{[1
]}

Lin, Y ^{[1
]}

Lester, LF ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 03期

关键词：

D O I：

10.1063/1.1582229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled InAs quantum-dot lasers grown by molecular-beam epitaxy using an AlGaAsSb metamorphic buffer layer on a GaAs substrate are reported. The resulting quantum-dot ensemble has a density >3 x 10(10)/cm(2) and a ground-state transition ranging from 1.46 to 1.63 mum. Pulsed, room-temperature operation generates lasing from the first excited state transition at wavelengths ranging from 1.27 to 1.34 mum. The minimum threshold current density (304 A/cm(2)) is achieved for a 7.7 mm cavity with cleaved, uncoated facets. (C) 2003 American Institute of Physics.

引用

页码：2133 / 2135

页数：3

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