Enhanced thermal and morphological stability of Ni(Si1-xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate

被引：6

作者：

He, JH ^{[1
]}

Wu, WW ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 237卷 / 1-2期

关键词：

germanosilicide; preamorphization; SiGe; implantation; Ni silicide;

D O I：

10.1016/j.nimb.2005.04.096

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The stability of nickel germanosilicide formed on Ni thin films on Si0.8Ge0.2 was found to be enhanced by the BF2+- preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100 degrees C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：174 / 178

页数：5

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