Stress evolution aspects during InAs/InP (001) quantum wires self-assembling

被引：18

作者：

González, MU ^{[1
]}

González, L ^{[1
]}

García, JM ^{[1
]}

González, Y ^{[1
]}

Silveira, JP ^{[1
]}

Briones, F ^{[1
]}

机构：

[1] Inst Microelect, CNM, CSIC, Madrid 28760, Spain

来源：

MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 01期

关键词：

nanostructures; self-assembling; quantum wires;

D O I：

10.1016/S0026-2692(03)00213-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here in situ measurements of stress evolution during molecular beam epitaxy growth of InAs/InP (001) quantum wires. The obtained results provide the necessary information to understand why quantum wires instead of quantum dots are formed in this heteroepitaxial system: a strong stress anisotropy along <110> directions is responsible for it. Moreover, during quantum wires growth As/P exchange reactions take place, which determine the total amount of InAs incorporated in the nanostructures and then their optical properties. In situ stress measurements have also been used to study the exchange process and they have allowed us to calculate the quantity of InAs that enters into the lattice because of it. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：13 / 17

页数：5

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