Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

被引：11

作者：

Watanabe, K

Tanaka, M

Nagel, N

Katori, K

Sugiyama, M

Yamoto, H

Yagi, H

机构：

[1] Yagi Microdevices Lab. Res. Ctr. S., Atsugi Technology Center, Atsugi-shi, Kanagawaken, 243, 4-14-1, Asahi-cho

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

SrBi2Ta2O9(SBT); Rapid Thermal Annealing (RTA) process; postannealing; seed layer; Pd top electrodes;

D O I：

10.1080/10584589708013019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the Rapid Thermal Annealing (RTA) process, a technique has been established to obtain SrBi2Ta2O9 (SBT) films which showed well-shaped hysteresis curves without a postannealing process after top electrode deposition, maintaining high remanent polarization (Pr) values, RTA conditions were optimized for nucleation of SBT. The effect of a seed layer on the film properties became obvious. This process allowed top electrode materials other than Pt. High remanent polarization (Pr) values could be also obtained with Pd top electrodes.

引用

页码：451 / 460

页数：10

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