AlGaN-GaN-AlInGaN induced base transistor

被引：18

作者：

Shur, MS ^{[1
]}

Bykhovski, AD

Gaska, R

Khan, MA

Yang, JW

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

[3] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期

关键词：

D O I：

10.1063/1.126612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have simulated an induced base transistor based on n-type GaN-AlGaN-GaN-AlInGaN heterostructure with a thin AlGaN emitter barrier and a thin GaN quantum well base. Our simulations show that such a majority carrier device should have a high collector current density, a low base resistance, a high current gain, and is expected to be a viable competitor to GaN-based heterostructure bipolar junction transistors. (C) 2000 American Institute of Physics. [S0003-6951(00)00922-0].

引用

页码：3298 / 3300

页数：3

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