Measurements of current transport in metal/Si1-xGex Schottky diodes

被引：3

作者：

He, L ^{[1
]}

Shi, ZQ ^{[1
]}

机构：

[1] HUGHES STX CORP,GREENBELT,MD

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.580903

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Schottky contacts formed by Al/Si1-xGex and Pd/Si1-xGex, with x=0.17 and 0.20, have been investigated by using current-voltage-temperature analysis. The Schottky barrier height varied with Al and Pd as the Schottky metal. The current transport mechanism was strongly affected by 550 degrees C annealing. In as-deposited samples, thermionic emission and field emission combined as the conduction mechanism. After 550 degrees C annealing, thermionic emission is the dominant mechanism. The barrier height, phi(B), was also found to decrease with the increase of germanium composition for the two used samples. X-ray diffraction was utilized to study the substrate crystal quality versus processing. The variation of surface crystal structure and stress with processing temperature was observed. (C) 1997 American Vacuum Society.

引用

页码：2437 / 2440

页数：4

共 8 条

[1] SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS [J].