Modeling and simulation of plasma etching reactors for microelectronics

被引:75
作者
Economou, DJ [1 ]
机构
[1] Univ Houston, Dept Chem Engn, Plasma Proc Lab, Houston, TX 77204 USA
基金
美国国家科学基金会;
关键词
plasma etching reactor; plasma modeling; plasma simulation;
D O I
10.1016/S0040-6090(99)01056-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As microelectronic devices continue to shrink and process requirements become ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control, and optimization of plasma reactors. A brief introduction and overview of the plasma reactor modeling and simulation problem is presented in this paper. The problem is broken down into smaller pieces (reactor, sheath. microfeature. and crystal lattice) to address the disparity in length scales. A modular approach also helps to resolve the issue of disparity in time scales. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:348 / 367
页数:20
相关论文
共 140 条
[1]   Negative ion measurements and etching in a pulsed-power inductively coupled plasma in chlorine [J].
Ahn, TH ;
Nakamura, K ;
Sugai, H .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (02) :139-144
[2]   TRANSIENT-BEHAVIOR DURING FILM REMOVAL IN DIFFUSION-CONTROLLED PLASMA-ETCHING [J].
ALKIRE, RC ;
ECONOMOU, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :648-656
[3]  
Allen M. P., 1990, COMPUTER SIMULATION
[4]  
ANDERSEN HH, 1987, NUCL INSTRUM METH B, V18, P321
[5]   MOLECULAR-DYNAMICS SIMULATION OF ATOMIC LAYER ETCHING OF SILICON [J].
ATHAVALE, SD ;
ECONOMOU, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :966-971
[6]  
AUCIELLO O, 1989, PLASMA DIAGNOSTICS, V1
[7]   THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF CHLORINE RF GLOW-DISCHARGES .1. THEORETICAL [J].
AYDIL, ES ;
ECONOMOU, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (05) :1396-1406
[8]   MODELING OF PLASMA-ETCHING REACTORS INCLUDING WAFER HEATING EFFECTS [J].
AYDIL, ES ;
ECONOMOU, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) :1471-1481
[9]   ION KINETICS IN LOW-PRESSURE, ELECTROPOSITIVE, RF GLOW-DISCHARGE SHEATHS [J].
BARNES, MS ;
FORSTER, JC ;
KELLER, JH .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (02) :240-244
[10]   CHEMICAL AND PHYSICAL SPUTTERING OF FLUORINATED SILICON [J].
BARONE, ME ;
GRAVES, DB .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1263-1274