MOLECULAR-DYNAMICS SIMULATION OF ATOMIC LAYER ETCHING OF SILICON

被引：100

作者：

ATHAVALE, SD ^{[1
]}

ECONOMOU, DJ ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT CHEM ENGN,PLASMA PROC LAB,HOUSTON,TX 77204

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579659

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：966 / 971

页数：6

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