ION-ASSISTED ETCHING OF SI WITH CL2 - THE EFFECT OF FLUX RATIO

被引：37

作者：

COBURN, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature ion-assisted etching of poly-Si with molecular chlorine and 1 keV Ar+ ions has been studied for a wide range of the neutral flux/ion flux ratio. In situ measurements of the etch rate made using quartz crystal microbalance methods are combined with modulated beam mass spectrometric studies of the etch products and the unreacted molecular chlorine reflected from the Si surface. The reaction probability for the incident chlorine is determined in two independent ways and good agreement is obtained. The products are determined to be primarily SiCl2 and SiCl4 with significant amounts of sputtered SiCl at low flux ratios.

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页码：1384 / 1389

页数：6

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