ION-BEAM ETCHING OF SILICON, REFRACTORY-METALS, AND REFRACTORY-METAL SILICIDES USING A CHEMISTRY ASSISTED TECHNIQUE

被引：10

作者：

CHINN, JD

PHILLIPS, W

ADESIDA, I

WOLF, ED

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115588

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：375 / 380

页数：6

共 29 条

[1]

[Anonymous], COMMUNICATION

[2] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J].

BARKER, RA ;

MAYER, TM ;

PEARSON, WC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :37-42

[3]

BEINVOGL W, 1982, SIEMENS FORSCH ENTW, V11, P180

[4]

BEINVOGL W, 1982, SOLID STATE TECHNOL, V26, P125

[5]

BOWER DH, 1982, J ELECTROCHEM SOC, V129, P796

[6]

BURTON RH, 1982, PLASMA PROCESSING, P250

[7] PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION-BEAM ETCHING [J].

CHINN, JD ;

ADESIDA, I ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :185-187

[8] CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO [J].

CHINN, JD ;

FERNANDEZ, A ;

ADESIDA, I ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :701-704

[9] REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES [J].

CHINN, JD ;

ADESIDA, I ;

WOLF, ED ;

TIBERIO, RC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1418-1422

[10]

CHINN JD, 1983, J VAC SCI TECHNOL B, V1, P1083

← 1 2 3 →