Dominant Mobility Modulation by the Electric Field Effect at the LaAlO3/SrTiO3 Interface

被引：273

作者：

Bell, C. ^{[1
,2
]}

Harashima, S. ^{[1
]}

Kozuka, Y. ^{[1
]}

Kim, M. ^{[1
]}

Kim, B. G. ^{[1
,3
]}

Hikita, Y. ^{[1
]}

Hwang, H. Y. ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778651, Japan

[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

[3] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 22期

关键词：

STRONTIUM-TITANATE; HETEROSTRUCTURES; OXIDES; GAS;

D O I：

10.1103/PhysRevLett.103.226802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

引用

页数：4

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