Electromigration performance of multi-level damascene copper interconnects

被引：51

作者：

Yokogawa, S

Okada, N

Kakuhara, Y

Takizawa, H

机构：

[1] NEC Corp Ltd, NEC Electron Devices, Syst LSI Div 3, Reliabil & Qual Control Dept,Nakahara Ku, Kawasaki, Kanagawa 2118666, Japan

[2] NEC Corp Ltd, NEC Electron Devices, ULSI Device Dev Div, Kawasaki, Kanagawa 2118666, Japan

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

10.1016/S0026-2714(01)00162-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Electromigration in 0.28-micron (um) wide and 0.3um thick multi-level damascene copper (Cu) interconnects with tungsten (W) studs via's have been investigated. Void growth at the cathode end of the lower line has been found as a result of electromigration. The dominant void for electromigration lifetime grows from the Cu/Via interface and grows along the Cu/SiNx interface. The activation energy of electromigration lifetime has been found to be 0.94 +/-0.11 eV, and the current density exponent 'n' has been found to be 2.03 +/-0.21. The structures in this study exhibit an incubation period of void nucleation. This was observed using the scanning transmission electron microscope (S -TEM) technique. From the investigation, influences of process fluctuation (e.g. lithography misalignment) on this growth have been found. The results suggest a guide of process controls specific to damascene Cu interconnects. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1409 / 1416

页数：8

共 12 条

[1]

[Anonymous], P 38 ANN INT REL PHY

[2]

Electromigration failure modes in damascene copper interconnects [J].

Arnaud, L ;

Gonella, R ;

Tartavel, G ;

Torres, J ;

Gounelle, C ;

Gobil, Y ;

Morand, Y .

MICROELECTRONICS RELIABILITY, 1998, 38 (6-8) :1029-1034

[3]

Edelstein D., 1997, P IEEE INT EL DEV M, P773

[4]

Hu C.-K., 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247), P267, DOI 10.1109/IITC.1999.787140

[5]

Electromigration path in Cu thin-film lines [J].

Hu, CK ;

Rosenberg, R ;

Lee, KY .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2945-2947

[6]

ELECTROMIGRATION IN AL(CU) 2-LEVEL STRUCTURES - EFFECT OF CU AND KINETICS OF DAMAGE FORMATION [J].

HU, CK ;

SMALL, MB ;

HO, PS .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :969-978

[7]

Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections [J].

Hu, CK ;

Gignac, L ;

Malhotra, SG ;

Rosenberg, R ;

Boettcher, S .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :904-906

[8]

HU CK, 2000, P 2000 MAT RES SOC S, P691

[9]

IGUCHI M, 1999, P 1999 INT EL DEV M, P615

[10]

STRESS EVOLUTION DUE TO ELECTROMIGRATION IN CONFINED METAL LINES [J].

KORHONEN, MA ;

BORGESEN, P ;

TU, KN ;

LI, CY .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3790-3799

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