Modeling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters

被引：38

作者：

Campera, Andrea ^{[1
]}

Iannaccone, Giuseppe

Crupi, Felice

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56126 Pisa, Italy

[2] Univ Calabria, Dipartimento Elettron Informat & Sistemat, I-87036 Arcavacata Di Rende, CS, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 01期

关键词：

gate leakage; high-k dielectrics; trap-assisted tunneling (TAT); trap cross section;

D O I：

10.1109/TED.2006.887202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage (I-V) characteristics, it is possible to extract a series of material parameters of alternative gate dielectrics. We have focused on HfO2 and HfSiXOYNZ gate stacks and have extracted information on the nature of localized states in the dielectric responsible for a trap-assisted tunneling (TAT) current component and for the temperature behaviour of the I-V characteristics. Simulations are based on a one-dimensional Poisson-Schrodinger solver capable to provide the pure tunneling current and TAT component. Energy and capture cross section of traps responsible for TAT current have been extracted.

引用

页码：83 / 89

页数：7

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