On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures

被引：26

作者：

Crupi, F

Ciofi, C

Germanò, A

Iannaccone, G

Stathis, JH

Lombardo, S

机构：

[1] Univ Messina, Dipartimento Fis Mat & Tecnol Fis Avanzate, I-98166 Messina, Italy

[2] Univ Messina, INFM, I-98166 Messina, Italy

[3] Univ Messina, Fac Ingn, I-98166 Messina, Italy

[4] Univ Pisa, Dipartimento Ingn Informaz, I-56126 Pisa, Italy

[5] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[6] CNR, Ist Nazl Metodol & Tecnol Microelettron, IMETEM, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 24期

关键词：

D O I：

10.1063/1.1487450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates the additional gate current component with respect to the direct tunneling of electrons between the conduction bands measured in ultrathin oxide metal-oxide-semiconductor field-effect transistors at low voltages, before and after the application of a high field stress. We discuss several possible conduction mechanisms on the basis of the band diagram profiles obtained by means of a one-dimensional self-consistent Poisson-Schrodinger solver and we explain why this additional leakage current is mainly due to electron tunneling involving the native and stress-induced interface states in the silicon band gap either at the cathode or at the anode. (C) 2002 American Institute of Physics.

引用

页码：4597 / 4599

页数：3

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