Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors

被引：22

作者：

Iannaccone, G

Crupi, F

Neri, B

Lombardo, S

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat & Te, I-56126 Pisa, Italy

[2] CNR, IMETEM, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 18期

关键词：

D O I：

10.1063/1.1321735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the tunneling current of a metal-oxide-semiconductor capacitor subjected to voltage stress exhibits suppressed shot noise with respect to the "full" shot noise level associated with the same current before stress. We provide experimental results exhibiting a suppression down to about 70% and a theoretical model for transport and noise in the stress induced leakage current regime based on trap assisted tunneling, which is able to reproduce such reduction. Numerical results from the model are compared with measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)03044-8].

引用

页码：2876 / 2878

页数：3

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[2]

Crupi F., 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394), P77, DOI 10.1109/IPFA.1999.791309

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