Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

被引：19

作者：

Huh, KS

Ham, MH

Myoung, JM

Lee, JM

Lee, KI

Chang, JY

Han, SH

Kim, HJ

Lee, WY

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 10A期

关键词：

(Ga; Mn)N; PEMBE; diluted magnetic semiconductor; wide bandgap ferromagnetic semiconductor; carrier-mediated ferromagnetism;

D O I：

10.1143/JJAP.41.L1069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

引用

页码：L1069 / L1071

页数：3

共 17 条

[1] Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb
Abe, E
Matsukura, F
Yasuda, H
Ohno, Y
Ohno, H
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4) : 981 - 985
[2] BHATT RN, 2001, CONDMAT0111184
[3] CHANG JG, UNPUB J APPL PHYS
[4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
Dietl, T
Ohno, H
Matsukura, F
Cibert, J
Ferrand, D
[J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
[5] Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors
Iye, Y
Oiwa, A
Endo, A
Katsumoto, S
Matsukura, F
Shen, A
Ohno, H
Munekata, H
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 63 (1-2): : 88 - 95
[6] Optical properties of the deep Mn acceptor in GaN:Mn
Korotkov, RY
Gregie, JM
Wessels, BW
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (10) : 1731 - 1733
[7] Mean field analysis of exchange coupling in amorphous DyFe2-B alloy ribbons
Lee, JM
Jung, JK
Lim, SH
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 234 (01) : 133 - 141
[8] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Ohno, H
Shen, A
Matsukura, F
Oiwa, A
Endo, A
Katsumoto, S
Iye, Y
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (03) : 363 - 365
[9] Ferromagnetic III-V heterostructures
Ohno, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04): : 2039 - 2043
[10] Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb
Oiwa, A
Slupinski, T
Munekata, H
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (04) : 518 - 520

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