Model for band-edge electroluminescence from metal-oxide-semiconductor silicon tunneling diodes

A detailed model is proposed to explain the electroluminescence spectrum from metal-oxide-silicon tunneling diodes. This model includes phonon-assisted processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination, respectively. With very few fitting parameters, the model accurately predicts the measured electroluminescence spectra. (C) 2001 American Institute of Physics.