Electrical properties of undoped and doped MOVPE-grown InAsSb

被引：13

作者：

Krug, T.

Botha, L.

Shamba, P.

Baisitse, T. R.

Venter, A.

Engelbrecht, J. A. A.

Botha, J. R.

机构：

[1] Nelson Mandela Metropolitan Univ, Dept Phys, Port Elizabeth, South Africa

[2] CSIR, Natl Laser Ctr, ZA-0001 Pretoria, South Africa

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 163-167期

关键词：

doping; impurities; surface layer; metalorganic chemical vapour deposition; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.10.016

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at low acceptor concentrations. A two-layer model is presented which can potentially be used to separate the bulk semiconducting properties from those of the surface layer. We here apply this model to two materials, InAs and InAsSb, and extract their transport properties. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：163 / 167

页数：5

共 15 条

[1] The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6-mu m) lasers and LED's [J].