HIGH-QUALITY INAS1-YSBY/INAS MULTILAYERS FOR MID-IR DETECTORS

被引：14

作者：

GONG, XY

KAN, H

MAKINO, T

YAMAGUCHI, T

NAKATSKASA, T

KUMAGAWA, M

ROWELL, NL

WANG, A

RINFRET, R

机构：

[1] NATL RES COUNCIL,INST NATL MEASUREMENT STAND,OTTAWA,ON K1SA 0R6,CANADA

[2] SHIZUOKA UNIV,ELECTR RES INST,JOHO KU,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1995年 / 30卷 / 05期

关键词：

D O I：

10.1002/crat.2170300505

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The high quality InAsSb multi-layers have been grown on InAs substrate by Gd-doped liquid phase epitaxy between 530 and 460 degrees C. Compositional dependence of energy band gap and of lattice constant for epilayers were studied. The material is characterized by surface morphology observation, FTIR transmittance, photoluminescence (PL), spectro-ellipsometry, and electrical measurements. Surface-illuminated room temperature p-n junction photodetectors in 3-5 mu m wavelength range have been obtained.

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收藏

页码：603 / 612

页数：10

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