Surface kinetics of polyphenylene oxide etching in a CF4/O2/Ar downstream microwave plasma

被引：5

作者：

Hsu, KC ^{[1
]}

Koretsky, MD ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem Engn, Ctr Adv Mat Res, Corvallis, OR 97331 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 05期

关键词：

D O I：

10.1149/1.1393440

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A downstream microwave plasma etcher with in situ diagnostics has been constructed to elucidate the chemical mechanisms in plasma etching of polyphenylene oxide (PPO). CF4/O-2/Ar reactant gases are used. Stable reaction products are investigated with mass spectrometry while reactive-free radical information is obtained using optical emission spectroscopy. Additionally, the weight loss of PPO is measured to determine average etch rate. A linens correlation between weight loss measurements of PPO laminates and integration of CO and CO2 formation measured by mass spectrometry suggests that real-time monitoring of polymer etching can be achieved. Etching dynamics are studied with gas compositions of CF4 varied from 6.6 to 30%. The etch process exhibits a dynamic reduction in rate with CF4 greater than or equal to 20%. C-1s spectra of X-ray photoelectron spectroscopy show an increase in fluorination of the etched surface with CF4%. A kinetic model based on the dynamic change of the number of carbon sites that are fluorinated is proposed. (C) 2000 The Electrochemical Society. S0013-4651(99)07-106-2. All rights reserved.

引用

页码：1818 / 1824

页数：7

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