Rashba spin splitting in inversion layers on p-type bulk InAs

被引：193

作者：

Matsuyama, T

Kürsten, R

Meissner, C

Merkt, U

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.61.15588

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the spin-orbit interaction on electron density in inversion layers of metal-oxide-semiconductor field-effect transistors on p-type InAs is studied by magnetotransport at liquid-helium temperatures. We observe beating patterns in the Shubnikov-de Haas oscillations, which manifest the Rashba effect in a triangular surface potential. Taking subband nonparabolicity into account we evaluate Rashba parameters alpha that increase with electron density n(s) reaching a value alpha = 3 x 10(-11) eV m at densities n(s)greater than or equal to 2.2 x 10(12) cm(-2) Implications for the spin-dependent transport in spin-polarized high-electron-mobility transistors utilizing InAs quantum wells are discussed.

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页码：15588 / 15591

页数：4

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