Nanometer scale x-ray absorption spectroscopy and chemical states mapping of ultra thin oxides on silicon using electrostatic force microscopy

被引：10

作者：

Ishii, M.

Hamilton, B.

Poolton, N. R. J.

Rigopoulos, N.

De Gendt, S.

Sakurai, K.

机构：

[1] Natl Inst Mat Sci, Tsukuba 3050044, Japan

[2] Univ Manchester, Sch Elect Engn & Elect, Manchester M60 1QD, Lancs, England

[3] Synchrotron Radiat Dept, Daresbury Lab, Warrington WA4 4AD, Cheshire, England

[4] IMEC, B-3001 Heverlee, Belgium

[5] Natl Inst Mat Sci, Tsukuba 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2437073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrostatic force microscopy (EFM) was used to obtain highly spatially resolved spectroscopic and image information of semiconductor surface region. EFM with x-ray source (X-EFM) can probe x-ray induced photoionization of near surface electron trapping. The X-EFM signal dependent on x-ray photon energy results in nanometer scale x-ray absorption spectra. Furthermore, probing tip scanning at fixed x-ray photon energy provides chemical states imaging of the trapping. The authors demonstrate characterization of substoichiometric chemical oxidation of a Si surface with less than 1 nm spatial resolution. (c) 2007 American Institute of Physics.

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页数：3

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