Time transient investigation of photo-induced electron localization at atomic step edges of Si(111)

被引：5

作者：

Ishii, M

Hamilton, B

机构：

[1] JASRI, Sayo, Hyogo 6795198, Japan

[2] UMIST, Dept Phys, Manchester M60 1QD, Lancs, England

[3] RIKEN, Harima Inst, Sayo, Hyogo 6795148, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 248卷 / 1-4期

关键词：

photo-induced electron localization; Si/SiOx; interface; UV laser; KFM; time transient;

D O I：

10.1016/j.apsusc.2005.03.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

To analyze a photo-induced electron localization process at atomic step edges of the Si-native oxide interface, the time transient signal of Kelvin force microscopy with a UV laser light source was investigated. The time constant of the photoinduced process for a laser wavelength lambda = 325 nm had a linear dependence with respect to the laser power P-w. An electron transition model that takes into account photo- and thermal-effects revealed that the photo-induced localization is dominant for P-w > 0.54 mW. The small photo irradiation effect occurring at lambda = 441.6 nm is explained by the low photo absorption efficiency for visible light. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：14 / 18

页数：5

相关论文

共 9 条

[1] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123

[2] NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].

CHAVEZPIRSON, A ;

VATEL, O ;

TANIMOTO, M ;

ANDO, H ;

IWAMURA, H ;

KANBE, H .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[4] Experimental teleportation of a quantum controlled-NOT gate [J].

Huang, YF ;

Ren, XF ;

Zhang, YS ;

Duan, LM ;

Guo, GC .

PHYSICAL REVIEW LETTERS, 2004, 93 (24)

[5] Electron trapping at the Si (111) atomic step edge [J].

Ishii, M ;

Hamilton, B .

APPLIED PHYSICS LETTERS, 2004, 85 (09) :1610-1612

[6] Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy [J].

Puntambekar, KP ;

Pesavento, PV ;

Frisbie, CD .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5539-5541

[7] Nanoscale investigation of optical and electrical properties by dynamic-mode atomic force microscopy using a piezoelectric cantilever [J].

Satoh, N ;

Kobayashi, K ;

Watanabe, S ;

Fujii, T ;

Horiuchi, T ;

Yamada, H ;

Matsushige, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7B) :4878-4881

[8] Dynamic-mode AFM using the piezoelectric cantilever: investigations of local optical and electrical properties [J].

Satoh, N ;

Kobayashi, K ;

Watanabe, S ;

Fujii, T ;

Horiuchi, T ;

Yamada, H ;

Matsushige, K .

APPLIED SURFACE SCIENCE, 2002, 188 (3-4) :425-429

[9] Development of ultrahigh vacuum atomic force microscopy with frequency modulation detection and its application to electrostatic force measurement [J].

Uchihashi, T ;

Ohta, M ;

Sugawara, Y ;

Yanase, Y ;

Sigematsu, T ;

Suzuki, M ;

Morita, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1543-1546