Electron trapping at the Si (111) atomic step edge

被引：13

作者：

Ishii, M

Hamilton, B

机构：

[1] JASRI, SPring 8, Sayo, Hyogo 6795198, Japan

[2] UMIST, Dept Phys, Manchester M60 1QD, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1787162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the charge distribution at the interface between the Si (111) wafer and its native oxide by Kelvin force microscopy (KFM) with excitation from a He-Cd laser source. Simultaneous imaging using KFM and atomic force microscopy revealed preferential electron trapping at the Si atomic step edge. No electron hopping (>3.5 nm radius) to neighboring trapping centers was observed. We also found that the ultraviolet laser irradiation enhanced the electron trapping. The trapping probability under visible laser irradiation and that without irradiation were almost the same, viz. similar to40% of that under ultraviolet irradiation. These findings are explained in terms of incomplete bond termination. (C) 2004 American Institute of Physics.

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页码：1610 / 1612

页数：3

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