Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

被引：16

作者：

Li, Z. M. ^{[1
]}

Hao, Y. ^{[1
]}

Zhang, J. C. ^{[1
]}

Yang, L. A. ^{[1
]}

Xu, S. R. ^{[1
]}

Chang, Y. M. ^{[1
]}

Bi, Z. W. ^{[1
]}

Zhou, X. W. ^{[1
]}

Ni, J. Y. ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Fundamental Sci Natl Wide Band Gap Semico, Sch Microelect, Xian 710071, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 23-24期

关键词：

Finite element; Induction; Temperature; Susceptor; Heat transfer; MOCVD; VAPOR-PHASE EPITAXY; TEMPERATURE DISTRIBUTION; WAFER TEMPERATURE; HEAT-TRANSFER; GROWTH; GAN; SYSTEM;

D O I：

10.1016/j.jcrysgro.2009.09.025

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new susceptor structure with a ring groove on the conventional column-shaped graphite susceptor is proposed for the vertical and induction heating MOCVD reactor, aimed at dividing the inner heat of susceptor into two parts, one of which accumulates on the upside and the other downside of the groove. The shape of the ring groove that changes the directions of heat conduction in the susceptor is optimized and validated by using finite element method (FEM). Compared with the conventional one, the optimized susceptor improves the uniformity of temperature distribution in the wafer and consequently promotes the growth characteristics. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4679 / 4684

页数：6

共 15 条

[1] Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model development, and parameter identification [J].