Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition

被引:27
作者
Lai, K. [1 ]
Pan, W.
Tsui, D. C.
Lyon, S.
Muehlberger, M.
Schaeffler, F.
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
关键词
D O I
10.1103/PhysRevB.75.033314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In a high mobility two-dimensional electron system in Si, near the critical density, n(c)=0.32x10(11) cm(-2), of the apparent metal-to-insulator transition, the conductivity displays a linear temperature (T) dependence around the Fermi temperature. When sigma(0), the extrapolated T=0 conductivity from the linear T dependence, is plotted as a function of density, two regimes with different sigma(0)(n) relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with n(c), and sigma(0) of the transition is similar to e(2)/h, the quantum conductance, per square. Toward T=0, the data deviate from linear sigma(T) relation and we discuss the possible percolation type of transition in our Si sample.
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页数:4
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