Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD

被引：19

作者：

Huang, JS ^{[1
]}

Dong, X

Luo, XD

Li, DB

Liu, XL

Xu, ZY

Ge, WK

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

surfaces; X-ray diffraction; growth from high temperature solutions; metalorganic chemical vapor deposition; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)01951-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxInyGa1-x-yN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870degreesC. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820 C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesC, in good agreement with the PL results, The improvement of AlxInyGa1-x-yN quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：84 / 90

页数：7

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