学术探索
学术期刊
新闻热点
数据分析
智能评审

Metalorganic vapor phase epitaxy of SB-doped ZnSe

被引：15
作者：
Takemura, M
Goto, H
Ido, T
机构：
[1] Chubu Univ, Aichi, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 5A期
关键词：
p-ZnSe; Sb-doping; MOVPE;
D O I：
10.1143/JJAP.36.L540
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Sb-doped ZnSe was grown on (100)GaAs substrate by using the Metalorganic Vapor Phase Epilaxy method in atmospheric pressure in order to obtain a p-type ZnSe film. The C-V measurement of the Sb-doped ZnSe layer suggests a p-type conduction. The maximum space charge concentration obtained was 1.5 x 10(16) cm(-3). The acceptor level of Sb, which was estimated from the photoluminescence spectrum, was found to be GB meV.
引用
收藏
页码：L540 / L542
页数：3
相关论文
共 7 条
[1]   DEEP-LEVEL TRANSIENT SPECTROSCOPY OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
GOTO, H ;
TANOI, T ;
TAKEMURA, M ;
IDO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A) :L827-L829
[2]   CHARACTERIZATION OF P-TYPE ZNSE [J].
HAASE, MA ;
CHENG, H ;
DEPUYDT, JM ;
POTTS, JE .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :448-452
[3]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[4]  
IDO T, IN PRESS NONLINEAR O
[5]   ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
KAMATA, A ;
MITSUHASHI, H ;
FUJITA, H .
APPLIED PHYSICS LETTERS, 1993, 63 (24) :3353-3354
[6]   NITROGEN-DOPED P-TYPE ZNSE FILMS GROWN BY MOVPE [J].
OHKI, A ;
SHIBATA, N ;
ANDO, K ;
KATSUI, A .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :692-696
[7]   NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
OHKI, A ;
SHIBATA, N ;
ZEMBUTSU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L909-L912
1