Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

被引：10

作者：

Liu, JL ^{[1
]}

Wang, KL

Moore, CD

Goorsky, MS

Borca-Tasciuc, T

Chen, G

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[3] Univ Calif Los Angeles, Dept Aerosp & Mech Engn, Los Angeles, CA 90095 USA

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

Sb surfactant; SiGe graded layers; symmetrically strained Si/Ge superlattice; thermal conductivity;

D O I：

10.1016/S0040-6090(00)00849-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method to grow high-quality SiGe graded buffer layer is presented. The main concept of the method is to use Sb as a surfactant when growing Sice graded layers. Compared with a Si0.5Ge0.5 graded sample without Sb surfactant, the Sb-assisted Si0.5Ge0.5 graded layer has much smoother surface and a significantly lower threading dislocation density. Thermal conductivity of a symmetrically strained Si/Ge superlattice grown on Sb-assisted Si0.5Ge0.5 graded layer is also presented. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：121 / 125

页数：5

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