Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching

被引：61

作者：

Yu, CC ^{[1
]}

Chu, CF ^{[1
]}

Tsai, JY ^{[1
]}

Huang, HW ^{[1
]}

Hsueh, TH ^{[1
]}

Lin, CF ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 8B期

关键词：

gallium nitride (GaN); nanorod; inductively coupled plasma (ICP);

D O I：

10.1143/JJAP.41.L910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel method of fabricating gallium nitride (GaN) nanotods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sapphire substrate by metal-organic chemical vapor deposition. Under the fixed Cl-2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W. the GaN nanorods and array were fabricated with a density of 10(8)-10(10) cm(-2) and dimension of 20-100 nm by varying the chamber pressure from 10 to 30 mTorr. The technique offers one-step, controllable method for the fabrication of GaN nanostructures and should be applicable for the fabrication of GaN-based nano-optoelectronic devices.

引用

页码：L910 / L912

页数：3

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