Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory

被引：17

作者：

Hong, Sung-Hoon ^{[1
]}

Bae, Byeong-Ju ^{[1
]}

Lee, Heon ^{[1
,2
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Korea Univ, Dept Nanosemicond Engn, Seoul 136713, South Korea

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 02期

关键词：

LITHOGRAPHY; PATTERNS; FILMS;

D O I：

10.1088/0957-4484/21/2/025703

中图分类号：

TB3 [工程材料学];

学科分类号：

082905 [生物质能源与材料];

摘要：

Ag and In co-doped SbTe phase change material (AgInSbTe) was used to fabricate nanopillar phase change memory. The AgInSbTe nanopillar type phase change device with 200 nm of diameter was fabricated by nanoimprint lithography and was reversibly changed between the resistances of 10(4) and 10(6) Omega by applying set/reset pulses using conducting atomic force microscopy. Due to the fast crystallization nature of AgInSbTe, the set operation of the device could be done with only 50 ns of set pulse. The fast crystallization nature of AgInSbTe is also responsible for the decrease in reset voltage of devices set with a short pulse.

引用

页数：5

共 22 条

[1]

Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy [J].

Bae, Byeong-Ju ;

Hong, Sung-Hoon ;

Hwang, Seon-Yong ;

Hwang, Jae-Yeon ;

Yang, Ki-Yeon ;

Lee, Heon .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (07)

[2]

Non-volatile memory technologies: emerging concepts and new materials [J].

Bez, R ;

Pirovano, A .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) :349-355

[3]

Imprint lithography with sub-10 nm feature size and high throughput [J].

Chou, SY ;

Krauss, PR .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :237-240

[4]

Imprinted Moth-Eye Antireflection Patterns on Glass Substrate [J].

Hong, Sung-Hoon ;

Bae, Byeong-Ju ;

Han, Kang-Soo ;

Hong, Eun-Ju ;

Lee, Heon ;

Choi, Kyung-Woo .

ELECTRONIC MATERIALS LETTERS, 2009, 5 (01) :39-42

[5]

Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography [J].

Hwang, Seon Yong ;

Jung, Ho Yong ;

Jeong, Jun-Ho ;

Lee, Heon .

THIN SOLID FILMS, 2009, 517 (14) :4104-4107

[6]

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials [J].

Jiao, Xinbing ;

Wei, Jingsong ;

Gan, Fuxi ;

Xiao, Mufei .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (03) :627-631

[7]

Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory [J].

Kao, Kin-Fu ;

Lee, Chain-Ming ;

Chen, Ming-Jung ;

Tsai, Ming-Jinn ;

Chin, Tsung-Shune .

ADVANCED MATERIALS, 2009, 21 (17) :1695-+

[8]

Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory [J].

Kim, Eun Tae ;

Lee, Jeong Yong ;

Kim, Yong Tae .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :103-105

[9]

Phase change memories: State-of-the-art, challenges and perspectives [J].

Lacaita, AL .

SOLID-STATE ELECTRONICS, 2006, 50 (01) :24-31

[10]

LAI S, 2003, IEDM, V255

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