Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

被引：19

作者：

Li, ZQ

Chen, H

Liu, HF

Wan, L

Zhang, MH

Huang, Q

Zhou, JM

Yang, N

Tao, K

Han, YJ

Luo, Y

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Tsing Hua Univ, Adv Mat Lab, Beijing 100084, Peoples R China

[3] Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5 x 10(15) to 2 x 10(18) cm(-3), the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model. (C) 2000 American Institute of Physics. [S0003-6951(00)03025-4].

引用

页码：3765 / 3767

页数：3

共 17 条

[1] A new initial growth method for pure cubic GaN on GaAs(001) [J].