On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

被引：185

作者：

Mookerjea, Saurabh ^{[1
]}

Krishnan, Ramakrishnan ^{[1
]}

Datta, Suman ^{[1
]}

Narayanan, Vijaykrishnan ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 10期

关键词：

Density of states (DOS); InAs; metal-oxide-semiconductor field-effect transistors (FETs) (MOSFETs); Miller capacitance; silicon; tunnel FETs (TFETs);

D O I：

10.1109/LED.2009.2028907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide-semiconductor field-effect transistor counterpart. Due to the presence of source side tunneling barrier, the silicon TFETs exhibit enhanced Miller capacitance, resulting in large voltage overshoot/undershoot in its large-signal switching characteristics. This adversely impacts the performance of Si TFETs for digital logic applications. It is shown that TFETs based on lower bandgap and lower density of states materials like indium arsenide show significant improvement in switching behavior due to its lower capacitance and higher ON current at reduced voltages.

引用

页码：1102 / 1104

页数：3

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