Fabrication of 10-nm Si pillars with self-formed etching masks

被引:3
作者
Tada, T
Kanayama, T
Weibel, P
Carroll, SJ
Seeger, K
Palmer, RE
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
[2] UNIV BIRMINGHAM,SCH PHYS & SPACE RES,NANOSCALE PHYS RES LAB,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
关键词
D O I
10.1016/S0167-9317(96)00129-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It has been found that nanoscale etching masks self-form during plasma etching with SF, when the sample is kept at around -130 degrees C, at which condensation of the reaction products starts to occur. We have also found that if nucleation sites are present on the surface, the condensation occurs preferentially on the nucleation sites and the resulting condensates act as etching masks, leading to the fabrication of Si nano-pillars. The above mechanism has been confirmed by fabrication of Si nanopillars using size-selected Ag clusters as condensation nuclei.
引用
收藏
页码:293 / 296
页数:4
相关论文
共 9 条
[1]   SURFACE-SCIENCE ASPECTS OF PLASMA-ASSISTED ETCHING [J].
COBURN, JW .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (05) :451-458
[2]   1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].
HOUZAY, F ;
GUILLE, C ;
MOISON, JM ;
HENOC, P ;
BARTHE, F .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72
[3]   RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].
LEWIS, BF ;
LEE, TC ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
FERNANDEZ, R ;
MASERJIAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424
[4]   SELF-LIMITING OXIDATION OF SI NANOWIRES [J].
LIU, HI ;
BIEGELSEN, DK ;
JOHNSON, NM ;
PONCE, FA ;
PEASE, RFW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2532-2537
[5]   ION-BEAM-ASSISTED ETCHING OF SI WITH FLUORINE AT LOW-TEMPERATURES [J].
MULLINS, CB ;
COBURN, JW .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7562-7566
[6]   SELF-ORGANIZED GROWTH OF STRAINED INGAAS QUANTUM DISKS [J].
NOTZEL, R ;
TEMMYO, J ;
TAMAMURA, T .
NATURE, 1994, 369 (6476) :131-133
[7]   HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
OSHINOWO, J ;
NISHIOKA, M ;
ISHIDA, S ;
ARAKAWA, Y .
APPLIED PHYSICS LETTERS, 1994, 65 (11) :1421-1423
[8]   LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON [J].
TACHI, S ;
TSUJIMOTO, K ;
OKUDAIRA, S .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :616-618
[9]   Scratch lithography of 10 nm silicon structures [J].
Tada, T ;
Kanayama, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B) :6947-6949