Characterization of the broad green band luminescence in CVD and synthetic Ib diamond

被引：19

作者：

Iakoubovskii, K ^{[1
]}

Adriaenssens, GJ ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Semicond Phys Lab, B-3001 Heverlee, Belgium

来源：

关键词：

CVD; defect; photoluminescence; sp(2) bonding;

D O I：

10.1016/S0925-9635(99)00275-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of photoluminescence (PL) and PL excitation (PLE) measurements on the broad green band in CVD and synthetic Ib diamond are reported. PLE spectra show that the green band in CVD diamond films is composed of two components. The first component correlates with the a-C content and is attributed to recombination in amorphous carbon. The second component increases with surface hydrogenation in CVD films, but remains almost unchanged in Ib diamond. On the basis of excitation and temperature dependencies of PL, the second band is ascribed to the donor-acceptor pair recombination. The photoionization threshold for the transition from the valence band to the donor is found to be 3.25 eV. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1017 / 1020

页数：4

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