Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN

被引：49

作者：

Kim, SY ^{[1
]}

Jang, HW ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.1534630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a low-resistant, thermally stable, and transparent ohmic contact on p-type GaN using an indium-tin-oxide (ITO) overlayer on Ni/Au contact. Ni (20 Angstrom)/Au (30 Angstrom)/ITO (600 Angstrom) contact with preannealing at 500 degreesC before ITO deposition showed lower contact resistivity by one order of magnitude than the contact without the preannealing. The preannealing produced NiO, acting in the role of diffusion barrier for outdiffusion of N and Ga atoms and indiffusion of In during the subsequent post-annealing. Thus, the formation of Au-In solid solution was effectively suppressed, resulting in the decrease of contact resistivity and enhancement in thermal stability. (C) 2003 American Institute of Physics.

引用

页码：61 / 63

页数：3

共 14 条

[11] Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum - Measurements by the four-probe method and by Kelvin force microscopy [J].

Olivier, J ;

Servet, B ;

Vergnolle, M ;

Mosca, M ;

Garry, G .

SYNTHETIC METALS, 2001, 122 (01) :87-89

[12] High-transparency Ni/Au ohmic contact to p-type GaN [J].

Sheu, JK ;

Su, YK ;

Chi, GC ;

Koh, PL ;

Jou, MJ ;

Chang, CM ;

Liu, CC ;

Hung, WC .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2340-2342

[13] Indium tin oxide ohmic contact to highly doped n-GaN [J].

Sheu, JK ;

Su, YK ;

Chi, GC ;

Jou, MJ ;

Liu, CC ;

Chang, CM .

SOLID-STATE ELECTRONICS, 1999, 43 (11) :2081-2084

[14] Growth modes of ultrathin metal films on dissimilar metal substrates [J].

Slavin, AJ .

PROGRESS IN SURFACE SCIENCE, 1995, 50 (1-4) :159-172

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