Clustering of vacancy defects in high-purity semi-insulating SiC

被引：27

作者：

Aavikko, R. ^{[1
]}

Saarinen, K.

Tuomisto, F.

Magnusson, B.

Son, N. T.

Janzen, E.

机构：

[1] Aalto Univ, Phys Lab, Espoo 02015, Finland

[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.75.085208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.

引用

页数：8

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