Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

被引：31

作者：

Chung, Hun Jae ^{[1
]}

Choi, Rak Jun ^{[1
]}

Kim, Min Ho ^{[1
]}

Han, Jae Woong ^{[1
]}

Park, Young Min ^{[1
]}

Kim, Yu Seung ^{[1
]}

Paek, Ho Sun ^{[1
]}

Sone, Cheol Soo ^{[1
]}

Park, Yong Jo ^{[1
]}

Kim, Jong Kyu ^{[2
]}

Schubert, E. Fred ^{[3
]}

机构：

[1] Samsung LED Co Ltd, R&D Inst, Suwon 443744, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Rensselaer Polytech Inst, Dept Phys Future Chips Constellat Appl Phys & Ast, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 24期

关键词：

claddings; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; light polarisation; multilayers; optical variables measurement; photoluminescence; semiconductor device measurement; time resolved spectra; wide band gap semiconductors;

D O I：

10.1063/1.3276066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multi-layer barrier structure is suggested as an alternative approach to single-layer polarization matching barrier structure for the reduction of efficiency droop. Time resolved photoluminescence measurement showed that polarization field was reduced by 19% in the multilayer barrier light emitting diodes structures. Optical power measurements on packaged devices showed overall increase of external quantum efficiency for all currents up to the current density of 150 A/cm(2). Increase of optical power is attributed to reduced polarization and decreased current overflow to p-side cladding layers. These results provide additional evidences that polarization is important in addressing the droop problem.

引用

页数：3

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