Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

被引：127

作者：

Schmidt, V. ^{[1
]}

Senz, S. ^{[1
]}

Goesele, U. ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 86卷 / 02期

关键词：

D O I：

10.1007/s00339-006-3746-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density Q(f) and the interface trap level density D-it. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Q(f), D-it, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius a(crit). An analytic expression for a(crit) is derived.

引用

页码：187 / 191

页数：5

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