Potential applications of III-V nitride semiconductors

被引:30
作者
Morkoc, H
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期
关键词
gallium nitride; semiconductors; temperature electronics;
D O I
10.1016/S0921-5107(96)01849-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gallium nitride and its alloys with InN and AlN have recently emerged as important semiconductor materials with applications to yellow, green: blue and ultraviolet portions of the spectrum as emitters and detectors and high Fewer temperature electronics. Blue and green nitride LEDs exhibit brightness levels and longevity well in excess of that required for outdoor applications. Combined with the available red LEDs, true full color all semiconductor displays can be attained for the first time. If used for traffic lights and illumination (pending further improvements in blue in some cases), these devices can outlast and outperform the incandescent light bulbs while saving precious energy. This material system is also intrinsically germane to short wavelength semiconductor lasers for increased data storage. Very recently, pulsed room temperature operation of 410 nm semiconductor lasers, the shortest wavelength ever from a semiconductor, have been reported. Nitrides are also conducive for high power devices/circuits, and sensors and detectors with applications in high temperature and unfriendly environments which leads to estimates that substantial weight savings can be achieved in aircraft and spacecraft. Moreover, the AlGaN alloy with bandgap above 5.5 eV shows negative electron affinity surfaces with applications to cold cathodes in general and Aat panel displays in particular. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:137 / 146
页数:10
相关论文
共 37 条
[1]   WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES [J].
AKASAKI, I ;
AMANO, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) :2266-2271
[2]  
AKTAS O, 1995, ELECTRON LETT, V31, P1389
[3]   HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].
AMANO, H ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386
[4]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[5]   A LONG ROAD TO OVERNIGHT SUCCESS [J].
ASTHANA, P .
IEEE SPECTRUM, 1994, 31 (10) :60-66
[6]   OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001) [J].
BENJAMIN, MC ;
WANG, C ;
DAVIS, RF ;
NEMANICH, RJ .
APPLIED PHYSICS LETTERS, 1994, 64 (24) :3288-3290
[7]  
Bhargava R. N., 1992, Optoelectronics - Devices and Technologies, V7, P19
[8]  
BINARI SC, 1994, 21 INT S COMP SEM P
[9]  
CHANG ZC, 1996, DEV RES C SANT BARB
[10]  
CHEN B, 1995, B MARCH APS M, V40, P127