Organic field-effect transistor using oligoselenophene as an active layer

被引：81

作者：

Kunugi, Y

Takimiya, K

Yamane, K

Yamashita, K

Aso, Y

Otsubo, T

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan

[2] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 01期

关键词：

D O I：

10.1021/cm020949f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The organic field-effect transistor using the oligoselenophene as an active layer has been first successfully fabricated. 2,2′:5′,2″:5″,2‴-Quaterselenophene (4S) showed p-channel characteristics and the best mobility of 3.6 × 10-3 cm-2 V-1 s-1 was obtained for the film prepared at a substrate temperature of 60 °C, which is the same with that of the vapor deposited quaterthiophene film.

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页码：6 / 7

页数：2

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