MOVPE growth of InP/GaInAs and GaAs/GaInP heterostructures for electronic transport applications

被引：7

作者：

Carlsson, N

Anand, S

Carlsson, SB

Gustafson, B

Omling, P

Ramvall, P

Samuelson, L

Seifert, W

Wang, Q

机构：

[1] Department of Solid State Physics, Lund University, Box 118

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00519-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of the layer structure on the electrical properties in (i) modulation doped InP/GaInAs quantum well samples, and, (ii) GaAs/GaInP resonant tunneling diodes has been investigated. The results reveal the importance of the different scattering processes. In particular, the influence of interface roughness scattering has been evaluated for both types of structures.

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收藏

页码：127 / 131

页数：5

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