RESONANT TUNNELING OF HOLES IN GA0.51IN0.49P/GAAS DOUBLE-BARRIER HETEROSTRUCTURES

被引：9

作者：

LIPPENS, D ^{[1
]}

MOUNAIX, P ^{[1
]}

SADAUNE, V ^{[1
]}

POISSON, MA ^{[1
]}

BRYLINSKI, C ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.351155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of resonant tunneling of holes in the GaInP/GaAs system. The tunneling structure consists of two lattice-matched 30-angstrom-thick Ga0.51In0.49P barriers with a 40-angstrom GaAs well in between, sandwiched by p-GaAs layers. Three resonances are clearly visible in the current-voltage characteristics with direct evidence of a negative differential resistance at 77 K. Analyzed in terms of tunneling probabilities for light and heavy holes, respectively, calculations show some discrepancy with experiment, suggesting band-mixing effects.

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页码：2057 / 2059

页数：3

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