Study of TiN and ZrN thin films grown by cathodic arc technique

被引：89

作者：

Arias, D. F. ^{[1
]}

Arango, Y. C. ^{[1
]}

Devia, A. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Lab Fis Plasma, Bogota, Colombia

来源：

APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 04期

关键词：

TiN; ZrN; cathodic arc;

D O I：

10.1016/j.apsusc.2006.03.017

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of TiN and ZrN were grown on stainless steel 316 substrate using the pulsed cathodic arc technique with different number of discharges (one to five discharges). The coatings were characterized in terms of crystalline structure, microstructure, elementary chemical composition and stoichiometric by X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy for chemical analyses (XPS), respectively. The XRD results show that for TiN as for ZrN, the preferential direction occurs in the plane (2 0 0), and this result stays when increasing the number of discharges. The grain size is increased with the increase of the number of discharges for both nitrides, the roughness for the TiN film is greater than for the ZrN film; these results were determined by AFM. XPS analysis determined that there is a higher nitrogen presence in the ZrN film than in the TiN film. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1683 / 1690

页数：8

共 47 条

[1] XPS STUDIES OF NITROGEN ION-IMPLANTED ZIRCONIUM AND TITANIUM [J].