The mechanism of dehydrogenation of SiNx:H films

被引:6
作者
Smirnova, TP
Yakovkina, LV
机构
[1] Institute of Inorganic Chemistry, Russian Academy of Sciences, Siberian Branch, Novosibirsk 630090
关键词
chemical vapour deposition (CVD); infrared spectroscopy; plasma processing and deposition; silicon nitride;
D O I
10.1016/S0040-6090(96)09103-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have developed a novel remote plasma enhanced chemical vapour deposition (RPECVD) process for the deposition of SiNx:H films from hexamethylcyclotrisilazane [SiNH(CH3)(2)](3) in which not all gases are plasma excited. The films grown in this manner do not have any carbon-bonded species. The films contain hydrogen in N-H bonds only. The hydrogen evolution kinetics was studied. It was shown that the rate of dehydrogenation does not depend on the film thickness and depends only on the initial concentration of bonded hydrogen in the film. It was established that the dissociation of N-H bonds is the limiting stage of the dehydrogenation process. An activation energy equal to 60 kJ mol(-1) was determined. This value is lower than the energy of dissociation of N-H bonds. It indicates that the hydrogen evolution process is governed by a cooperative phenomenon proceeding in the network.
引用
收藏
页码:6 / 10
页数:5
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