TENSIMETRIC INVESTIGATION OF SILICON-NITRIDE FILMS

被引：11

作者：

CHRAMOVA, LV

CHUSOVA, TP

KOKOVIN, GA

机构：

[1] Inst of Inorganic Chemistry, Novosibirsk, USSR, Inst of Inorganic Chemistry, Novosibirsk, USSR

来源：

THIN SOLID FILMS | 1987年 / 147卷 / 03期

关键词：

D O I：

10.1016/0040-6090(87)90022-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：267 / 273

页数：7

共 16 条

[1] CHEMICAL NONUNIFORMITY OF THIN DIELECTRIC FILMS PRODUCED BY AMMONOLYSIS OF MONOSILANE [J].

BELYI, VI ;

KUZNETSOV, FA ;

SMIRNOVA, TP ;

CHRAMOVA, LV ;

KRAVCHENKO, LK .

THIN SOLID FILMS, 1976, 37 (02) :L39-L42

[2]

CHERNOV IP, 1982, THIN SOLID FILMS, V82, P49

[3]

CHRAMOVA LV, 1984, ELEKT TEKH 6, V1, P10

[4]

DUSHMAN S, 1962, SCI F VACUUM TECHNIQ

[5]

Harrick N.J., 1967, INTERNAL REFLECTION

[6]

KOKOVIN GA, 1979, IZV SIB OTD AKAD KN, V1, P13

[7] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[8] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

PEERCY, PS ;

STEIN, HJ ;

DOYLE, BL ;

PICRAUX, ST .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) :11-24

[9] GAP STATES IN SILICON-NITRIDE [J].

ROBERTSON, J ;

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :415-417

[10] THE MECHANISM OF N-H BOND DECOMPOSITION IN SILICON-NITRIDE FILMS [J].

SMIRNOVA, TP ;

BELYI, VI ;

CHRAMOVA, LV .

THIN SOLID FILMS, 1980, 74 (02) :287-293

← 1 2 →