Quantum and classical scattering times due to charged dislocations in an impure electron gas

被引：25

作者：

Jena, D ^{[1
]}

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.66.241307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We derive the ratio of transport and single-particle relaxation times in three- and two-dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both three- and two-dimensional electron transport.

引用

页码：1 / 4

页数：4

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