Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

被引：80

作者：

Kageshima, H

Taguchi, A

Wada, K

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] MIT, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nitrogen-doping effect on vacancy aggregation in Si is studied by comparing total energies of various complexes of nitrogen atoms and Si vacancies in terms of first-principles calculations. Two nitrogen atoms are found to form a stable complex with two Si vacancies, strongly suggesting that a supersaturation of "isolated" Si vacancies in growth cooling can be suppressed. The delayed void formation observed in N-doped Czochralski Si indeed supports this suggestion. (C) 2000 American Institute of Physics. [S0003-6951(00)03125-9].

引用

页码：3718 / 3720

页数：3

共 22 条

[1] SWIRL DEFECTS IN FLOAT-ZONED SILICON-CRYSTALS [J].