Semiconductor microlenses fabricated by one-step wet etching

被引:31
作者
Kim, YS [1 ]
Kim, J
Choe, JS
Roh, YG
Jeon, H
Woo, JC
机构
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
关键词
chemical etching; diffusion process; microlens; refraction; semiconductor materials;
D O I
10.1109/68.841268
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based on Br-2 solution. The simple one-step wet etching process produced high-quality microlenses of GaAs and InP, the two most popular compound semiconductor materials used in optoelectronics. A spherical GaAs microlens with a nominal lens diameter of 30 mu m exhibited a radius of curvature and focal length of 91 and 36 mu m, respectively. The surface roughness, examined by atomic force microscopy (AFM), was measured to be below +/-10 Angstrom. This microlens fabrication method should be readily applicable due to the simplicity in processing and the high-quality results.
引用
收藏
页码:507 / 509
页数:3
相关论文
共 9 条
[1]   INTEGRATED OPTICAL MODESHAPE ADAPTERS IN INGAASP/INP FOR EFFICIENT FIBER-TO-WAVE-GUIDE COUPLING [J].
BRENNER, T ;
MELCHIOR, H .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) :1053-1056
[2]   High power narrow divergence DFB laser diode at 1.55μm [J].
Jeon, H ;
Mathur, A ;
Ziari, M .
ELECTRONICS LETTERS, 1998, 34 (13) :1313-1315
[3]   High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications [J].
Jeon, H ;
Verdiell, JM ;
Ziari, M ;
Mathur, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (06) :1344-1350
[4]   LARGE-NUMERICAL-APERTURE MICROLENS FABRICATION BY ONE-STEP ETCHING AND MASS-TRANSPORT SMOOTHING [J].
LIAU, ZL ;
MULL, DE ;
DENNIS, CL ;
WILLIAMSON, RC ;
WAARTS, RG .
APPLIED PHYSICS LETTERS, 1994, 64 (12) :1484-1486
[5]   GaAs microlens arrays grown by shadow masked MOVPE [J].
Peake, GM ;
Sun, SZ ;
Hersee, SD .
JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) :1134-1138
[6]   MONOLITHIC INTEGRATION OF VERTICAL-CAVITY LASER-DIODES WITH REFRACTIVE GAAS MICROLENSES [J].
STRZELECKA, EM ;
ROBINSON, GD ;
PETERS, MG ;
PETERS, FH ;
COLDREN, LA .
ELECTRONICS LETTERS, 1995, 31 (09) :724-725
[7]   Parallel free-space optical interconnect based on arrays of vertical-cavity lasers and detectors with monolithic microlenses [J].
Strzelecka, EM ;
Louderback, DA ;
Thibeault, BJ ;
Thompson, GB ;
Bertilsson, K ;
Coldren, LA .
APPLIED OPTICS, 1998, 37 (14) :2811-2821
[9]  
Williams R., 1990, MODERN GAAS PROCESSI